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Description
| Model: | IRFB4110 |
| Product Type: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Mounting Style: | Through Hole |
| Package/Case: | TO – 220 |
| Vds-Drain-Source Breakdown Voltage: | 100 V |
| Id-Continuous Drain Current: | 180 A |
| Rds On-Drain-Source Resistance: | 4.5 mΩ |
| Vgs-Gate-Source Voltage: | – 20 V, + 20 V |
| Operating Temperature: | – 55 °C to + 175 °C |
| Pd-Power Dissipation: | 370 W |
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