Description
| Product Category: | IGBT Transistors |
| Technology: | Si |
| Package/Case: | TO-3P |
| Mounting Style: | Through Hole |
| Configuration: | Single |
| Collector-Emitter Voltage VCEO Max: | 1.2 kV |
| Maximum Gate Emitter Voltage: | – 25 V, 25 V |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Continuous Collector Current Ic Max: | 64 A |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
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