Description
| Device Type: | NPT Trench IGBT |
| Package: | TO-3P |
| Collector-Emitter Voltage (VCES): | 1200 V |
| Gate-Emitter Voltage (VGES): | ±20 V |
| Continuous Collector Current (IC): | 50 A @ TC = 25 °C |
| Continuous Collector Current (IC): | 25 A @ TC = 100 °C |
| Pulsed Collector Current (ICM): | 75 A |
| Diode Forward Current (IF): | 25 A @ TC = 100 °C |
| Diode Peak Forward Current (IFM): | 150 A |
| Maximum Power Dissipation: | 312 W @ TC = 25 °C |
| Maximum Power Dissipation: | 125 W @ TC = 100 °C |
| Collector-Emitter Saturation Voltage: | Typ. 2.0 V @ IC = 25 A, VGE = 15 V |
| Gate Threshold Voltage (VGE(th)): | 3.5 – 7.5 V |
| Switching Energy (Eon): | Typ. 4.1 mJ |
| Switching Energy (Eoff): | Typ. 0.96 mJ |
| Total Gate Charge (Qg): | Typ. 200 nC |
| Input Capacitance (Cies): | Typ. 3700 pF |
| Output Capacitance (Coes): | Typ. 130 pF |
| Reverse Transfer Capacitance (Cres): | Typ. 80 pF |
| Diode Forward Voltage (VFM): | Typ. 2.0 V @ IF = 25 A |
| Diode Reverse Recovery Time (trr): | Typ. 235 ns |
| Thermal Resistance Junction-to-Case (RθJC): | 0.4 °C/W |
| Operating Junction Temperature: | −55 °C to +150 °C |
| Storage Temperature: | −55 °C to +150 °C |
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