Description
- Dynamic dv/dt rating
- Fast switching
- Ease of paralleling
- Required simple drive circuit
- Repetitive avalanche rated
- Maximum Drain-to-source voltage VDS: 100V
- Maximum continuous drain current ID: 14A
- Pulse drain current: 56A
- Maximum power dissipation: 88W
- Maximum gate-to-source voltage: ±20V
- Peak diode recovery dv/dt: 5.5V/ns
- On-state resistance: 0.16Ω
- Total gate charge Qg: 26nC
- Operating junction and storage temperature range: -55˚C to +175˚C
- Package: TO-220
- Transistor Polarity: N-channel
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