الوصف
N-Channel Power MOSFET
· Continuous Drain Current (ID): 8A
· Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
· Drain to Source Breakdown Voltage: 500V
· Drain Source Resistance (RDS) is 0.85 Ohms
· Rise time and fall time is 23nS and 20nS
· Available in To-220 package
المراجعات
لا توجد مراجعات بعد.