الوصف
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | – continuous TC=25°C 50A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 70 m? |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 200 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 5mm |
| Maximum Operating Temperature | +150 ?C |
| Length | 15.8mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Minimum Operating Temperature | -55 ?C |
| Height | 18.9mm |
| Series | QFET |
المراجعات
لا توجد مراجعات بعد.