FQA50N60

9,000ج.س.

 N-Channel (600V -50A) ترانزستور موسفيت 

MOSFET N-Channel (600V -50A) – (Large – TO-3PN)

Description

Attribute Value
Channel Type N
Maximum Continuous Drain Current – continuous TC=25°C    50A
Maximum Drain Source Voltage 600 V
Package Type TO-3PN
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 70 m?
Channel Mode Enhancement
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 200 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Width 5mm
Maximum Operating Temperature +150 ?C
Length 15.8mm
Transistor Material Si
Typical Gate Charge @ Vgs 85 nC @ 10 V
Minimum Operating Temperature -55 ?C
Height 18.9mm
Series QFET

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