Description
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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60 V
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Current – Continuous Drain (Id) @ 25°C
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200mA (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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5Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id
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3V @ 1mA
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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50 pF @ 25 V
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FET Feature
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–
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Power Dissipation (Max)
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400mW (Ta)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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