IRFB4227

Description

Type Designator: AUIRFB4227  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ – Maximum Power Dissipation: 330 W

|Vds|ⓘ – Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V

|Id| ⓘ – Maximum Drain Current: 65 A

Tj ⓘ – Maximum Junction Temperature: 175 °C