الوصف
- Type: IGBT (Insulated Gate Bipolar Transistor).
- Voltage: 1200V Collector-Emitter Voltage (VCES).
- Current: 25A Collector Current (IC) at 100°C, 50A Collector Current (IC) at 25°C.
- Features: Low saturation voltage, low switching loss, high input impedance, potentially with a co-packaged free-wheeling diode.
- Applications: Solar inverters, UPS inverters, AC drives, DC drives and choppers, resonant or soft switching applications, induction heating, motor control.
- Package: Typically a TO-247 package or similar.
المراجعات
لا توجد مراجعات بعد.