S9018

Description

• Type: NPN Bipolar Junction Transistor (BJT).
• Package: Typically found in a TO-92 package.
• Collector-Base Voltage (VCBO): 30V.
• Collector-Emitter Voltage (VCEO): 15-18V.
• Emitter-Base Voltage (VEBO): 5V.
• Collector Current (IC): 50mA.
• Power Dissipation (Ptot): 200mW.
• DC Current Gain (hFE): 100-300 at IC = 1mA, VCE = 6V.
• Transition Frequency (fT): Typically 150MHz.
• High Current Gain Bandwidth Product: fT=1.1 GHz (Typ).