Description
- Maximum Collector Current (IC): -100mA
- Collector-Base Breakdown Voltage (V(BR)CBO): -50V
- Collector-Emitter Breakdown Voltage (V(BR)CEO): -45V
- Emitter-Base Breakdown Voltage (V(BR)EBO): -5V
- Collector Dissipation (PC): 0.2W (SOT-23), 0.45W (TO-92)
- Transition Frequency (fT): 150MHz
- DC Current Gain (hFE): Varies depending on the specific transistor type and operating conditions, but typically ranges from 200-1000
- Collector-Emitter Saturation Voltage (VCE(sat)): -0.3V (IC=-100mA, IB=-5mA)
- Base-Emitter Saturation Voltage (VBE(sat)): -1V (IC=-100mA, IB=-5mA)
- Operating Temperature: -55°C to +150°C
Reviews
There are no reviews yet.