S8550

1,000ج.س.

ترانزستور الوصلة ثنائية القطب PNP (BJT) يستخدم عادة في تطبيقات التضخيم والتبديل منخفضة الطاقة

PNP bipolar junction transistor (BJT) commonly used for low-power amplification and switching applications

Description

  • Transistor Type: PNP BJT
  • Package: TO-92
  • Maximum Collector Current (IC): 0.5A (500mA)
  • Maximum Collector-Base Voltage (VCBO): -40V
  • Maximum Collector-Emitter Voltage (VCEO): -25V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Typical DC Current Gain (hFE): 85-300
  • Power Dissipation (PD): Typically around 625mW 

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