S8050

Description

• Transistor Type: NPN Bipolar Junction Transistor
• Package: SOT-23
• Maximum Collector Current (IC): 700mA
• Maximum Collector-Emitter Voltage (VCE): 20V
• Maximum Collector-Base Voltage (VCB): 30V
• Maximum Emitter-Base Voltage (VEB): 5V
• Maximum Collector Dissipation (PC): 1W
• DC Current Gain (hFE): Typically 40-400
• Operating Temperature: -65°C to +150°C
• Maximum Power: 2 Watts
• Base-Emitter Saturation Voltage (VBE(sat)): 1.2V