K30H603

14,000ج.س.

IGBT (ترانزستور ثنائي القطب ذو بوابة معزولة)  جهد 600 فولت وتيار تجميع أقصى يبلغ 30 أمبير

IGBT (Insulated Gate Bipolar Transistor)  with a voltage rating of 600V and a maximum collector current of 30A

Description

  • Part Number: IKW30N60H3 (also known as K30H603)
  • Package: TO-247-3
  • Voltage: 600V
  • Current: 30A (maximum collector current)
  • Technology: Trench and Fieldstop
  • Diode: Soft, fast recovery anti-parallel diode
  • Maximum Junction Temperature: 175°C
  • Power Dissipation: 187W
  • Operating Temperature: Specified over a range suitable for diverse environments (not specified in detail in the provided context)
  • Other features: Pb-free and RoHS compliant
  • Applications: Power supply circuits, industrial control systems, medical equipment (due to isolation capabilities)

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