IRFP460

IRFP460

6,500ج.س.

ترانزستور MOSFET ذو قناة N، مصمم لتطبيقات التبديل عالية الجهد والتيار. يتميز بجهد تصريف أقصى يبلغ 500 فولت، وتيار تصريف مستمر يبلغ 20 أمبير، ومقاومة تشغيل منخفضة تبلغ 0.27 أوم.

N-channel MOSFET designed for high-voltage, high-current switching applications. It features a maximum drain-source voltage of 500V, a continuous drain current of 20A, and a low on-resistance of 0.27Ω.
Category:

Description

  • Type: N-Channel MOSFET
  • Voltage: 500V (Maximum drain-source voltage)
  • Current: 20A (Maximum continuous drain current)
  • On-Resistance (RDS(on)): 0.27Ω (Typical)
  • Gate Threshold Voltage: 2V – 4V (Typically)
  • Package: TO-247
  • Typical Applications: High voltage amplifiers, motor drivers, and switching converters with mains voltage input 

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