IRF530

Description

• Dynamic dv/dt rating
• Fast switching
• Ease of paralleling
• Required simple drive circuit
• Repetitive avalanche rated
• Maximum Drain-to-source voltage V_DS: 100V
• Maximum continuous drain current I_D: 14A
• Pulse drain current: 56A
• Maximum power dissipation: 88W
• Maximum gate-to-source voltage: ±20V
• Peak diode recovery dv/dt: 5.5V/ns
• On-state resistance: 0.16Ω
• Total gate charge Q_g: 26nC
• Operating junction and storage temperature range: -55˚C to +175˚C
• Package: TO-220
• Transistor Polarity: N-channel