IRF630

5,000ج.س.

MOSFET طاقة 200 فولت، 9 أمبير قناة N

200V, 9A N-channel power MOSFET

Description

  • Transistor Type: N-channel.
  • Voltage (Drain-to-Source): 200V.
  • Current (Continuous Drain): 9A.
  • On-Resistance: Typically 0.29Ω – 0.40Ω.
  • Package: TO-220.
  • Power Dissipation: 74W.
  • Gate Charge: 43 nC.
  • Gate-to-Source Voltage: ±20V.
  • Operating Temperature: -55°C to 150°C.
  • Reverse Recovery Time (trr): 170ns (typ).
  • Pulsed Drain Current: 36A. 

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