50T65FD1

Description

SGT50T65FD1PN IGBT 50A 650V

Type Designator: SGT50T65FD1PT
Type: IGBT + Anti-Parallel Diode
Marking Code: 50T65FD1
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 235 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 145 nS
Coesⓘ – Output Capacitance, typ: 90 pF
Qgⓘ – Total Gate Charge, typ: 145 nC
Package: TO3PN