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Description
| Transistor Type | MOSFET | |
|---|---|---|
| Control Channel Type | N-Channel | |
| Package | SC64 | |
| Drain-Source Voltage (Maximum) | VDS | 900V |
| Gate-Source Voltage (Maximum) | VGS | 30V |
| Drain Current (Maximum) | ID | 1A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 8Ohm |
| Power Dissipation (Maximum) | PD | 40W |
| Drain-Source Capacitance | 40pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 20nS | |
| Gate-Threshold Voltage (Maximum) | 4V | |
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