20N60

Description

N-channel enhancement mode power MOSFET

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Drain power dissipation : PD = 370 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Motor control

2. UPS

3. DC choppers and switch-mode

4. Resonant-mode power supplies