TTC5200

Description

TTC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200 Power Amplifier
Applications Unit: mm High collector voltage: VCEO = 230 V (min) Complementary to TTA1943 Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCo

Type Designator: TTC5200

SMD Transistor Code: TTC5200

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 230 V

Maximum Collector-Emitter Voltage |Vce|: 230 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 17 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 145 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: –

Package: TO3PL