Description
- P-channel MOSFET
- Dynamic dv/dt rating
- Low threshold voltage
- High-speed switching
- Low turn-on resistance
- Repetitive avalanche rated
- Simple drive requirement
- Ease of paralleling
- Drain-to-source voltage VDS: -100 V
- Maximum Continuous drain current ID: -19 A
- Maximum Pulse drain current: -72 A
- Maximum Power dissipation PD: 150 W
- Gate-to-source voltage VGS: ±20 V
- Peak diode recovery dv/dt: -5.5 V/ns
- Total gate charge QG: 61 nC
- On-state resistance RDS: 0.20 Ω
- Operating temperature range: -55 to +175 ˚C
- Transistor Polarity: P-channel
- Package: TO-220AB
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