Description
Attribute | Value |
Channel Type | N |
Maximum Continuous Drain Current | – continuous TC=25°C 50A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-3PN |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 70 m? |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 200 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 5mm |
Maximum Operating Temperature | +150 ?C |
Length | 15.8mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |
Minimum Operating Temperature | -55 ?C |
Height | 18.9mm |
Series | QFET |
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