IRF540

5,000ج.س.

موسفيت ذو قناة N، جهد مصدر تصريف 100 فولت، وتيار تصريف مستمر 33 أمبير، ومقاومة تشغيل منخفضة.

N-channel MOSFET known for its high-power switching and amplification capabilities. It features a 100V drain-source voltage, 33A continuous drain current, and a low on-resistance

Description

  • Type: N-Channel MOSFET
  • Voltage (Vds): 100V
  • Current (Id): 33A (continuous), 110A (pulse)
  • Package: TO-220AB
  • On-Resistance (Rds(on)): Typically around 0.04 ohms
  • Operating Temperature: -55°C to +175°C
  • Power Dissipation: 150W
  • Gate Threshold Voltage: 2V – 4V
  • Gate-Source Voltage: ±20V 

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